 | Up a level |
Pérez-Rodríguez, A. and Romano-Rodríguez, A. and Morante, J.R. and Acero, M.C. and Esteve, J. and Montserrat, J. and El-Hassani, A. (1996) Etch-stop behavior of buried layers formed by substoichiometric nitrogen ion implantation into silicon. Journal of the Electrochemical Society, 143 (3). pp. 1026-1033.
