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Number of items: 12.

Article

El Abbassi, A. and Amhouche, Y. and Bendada, E. and Rmaily, R. and Raïs, K. (2001) Characterization of series resistances and mobility attenuation phenomena in short channel MOS transistors. Active and Passive Electronic Components, 24 (1). pp. 13-22.

Hachami, K. and Moussaid, D. and Rahmoun, M. and Bendada, E. (2001) Utilization of the thermoelectric sensor to realize a new fluid level detector. Active and Passive Electronic Components, 24 (3). pp. 177-186.

Bendada, E. and Rahmoun, M. and El Hassani, A. and Rais, K. and Elabbassi, A. (2000) Characterization of shrinking device geometries effects in N-channel HEXFETs. Modelling, measurement and control. A, general physics, electronics, electrical engineering, 73 (1-2). pp. 21-27.

Rahmoun, M. and El Hassani, A. and Leclerq, D. and Bendada, E. (2000) Peltier effect applied to the design and realization of a new mass flow sensor. Active and Passive Electronic Components, 22 (3). pp. 165-174.

Rahmoun, M. and Bendada, E. and El Hassani, A. and Raïs, K. (2000) Relaxable damage in hot-carrier stressing of n-MOS transistors. Active and Passive Electronic Components, 22 (3). pp. 147-156.

Bendada, E. and Raïs, K. (1999) Annealing of radiation damage in MOS devices: Study by diode parameter determination. EPJ Applied Physics, 5 (1). pp. 91-94.

Bendada, E. and Raïs, K. (1998) Analysis of hot-carrier degradation in small and large W/L n-channel transistors. Active and Passive Electronic Components, 21 (3). pp. 189-198.

Bendada, E. and Raïs, K. and Mialhe, P. (1998) Characterization of annealing of Co-60 Gamma-ray damage in N-channel power MOSFETs. Radiation Effects and Defects in Solids, 143 (3). pp. 247-254.

Bendada, E. and Raïs, K. (1998) Diode physical parameters for hexfets characterization of dose effect. Active and Passive Electronic Components, 21 (3). pp. 199-208.

Bendada, E. and Raïs, K. (1998) Hot carrier stressing damage in N-channel HEXFETs. Radiation Effects and Defects in Solids, 145 (4). pp. 297-305.

Bendada, E. and Raïs, K. and Mialhe, P. and Charles, J.P. (1998) Surface recombination via interface defects in field effect transistors. Active and Passive Electronic Components, 21 (1). pp. 61-71.

Bendada, E. and Raïs, K. and Mialhe, P. (1997) Caractérisation des dégradations de transistors MOS de puissance sous irradiations. Journal de Physique III, 7 (11). pp. 2131-2143.

This list was generated on Sun Jan 24 16:27:04 2021 CET.