Rmou, A. and Luquet, H. and Perotin, M. and Skouri, E.M. (1998) Incidence of final states-density for impact ionization on the electron ionization rate. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37 (11). pp. 5880-5884.

Full text not available from this repository.
Official URL: https://www.scopus.com/inward/record.uri?eid=2-s2....

Abstract

The anisotropy of electron impact ionization rate as related to the band structure is experimentally established. At present, theoretical studies often attribute its dependence to the overlap integrals variations, alloy disorder effect or impact ionization process involving a second conduction band. We present a different numerical calculation of electron impact ionization probability in Ga1-xAlxSb avalanche photodiodes (0 ≤ x ≤ 0.08). The ionization probability is calculated directly from the numerical evaluation of the matrix element including the full details of the first conduction band. It is found that the dependence of the electron ionization probability on the final states-density for impact ionization is very crucial compared with variations in overlap integrals or alloy disorder effect.

Item Type: Article
Uncontrolled Keywords: Anisotropy; Avalanche diodes; Band structure; Computational methods; Electron energy levels; Ionization; Probability; Semiconducting gallium compounds, Electron impact ionization; Gallium aluminum antimonide, Photodiodes
Subjects: Engineering
Divisions: SCIENTIFIC PRODUCTION > Engineering
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:47
URI: http://eprints.umi.ac.ma/id/eprint/3446

Actions (login required)

View Item View Item