Relaxable damage in hot-carrier stressing of n-MOS transistors

Rahmoun, M. and Bendada, E. and El Hassani, A. and Raïs, K. (2000) Relaxable damage in hot-carrier stressing of n-MOS transistors. Active and Passive Electronic Components, 22 (3). pp. 147-156.

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Abstract

A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg = Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse recombination current are shown to be related to relaxation time, and are significant at Vg = -Vd. These effects are discussed and explained by the evolution of the interface states.

Item Type:	Article
Uncontrolled Keywords:	Electric currents; Electric resistance; Failure analysis; Hot carriers; Stress relaxation, Body drain junction; Hexagonal field effect transistors; Relaxable damage, MOSFET devices
Subjects:	Engineering
Divisions:	SCIENTIFIC PRODUCTION > Engineering
Depositing User:	Administrateur Eprints Administrateur Eprints
Last Modified:	31 Jan 2020 15:47
URI:	http://eprints.umi.ac.ma/id/eprint/3436

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