El Abbassi, A. and Amhouche, Y. and Bendada, E. and Rmaily, R. and Raïs, K. (2001) Characterization of series resistances and mobility attenuation phenomena in short channel MOS transistors. Active and Passive Electronic Components, 24 (1). pp. 13-22.

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Abstract

As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsd influence strongly the effective mobility. The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance Rsd. Using the approach of the Surface Roughness Scattering which enables a consistent modelling of the mobility to be obtained from low to high electric field, this allow to determine all model parameters in particular a Series Resistance from the plot of the transfer characteristic drain current Id versus gate voltage Vg Curves.

Item Type: Article
Uncontrolled Keywords: Approximation theory; Attenuation; Electric fields; Electric resistance; MOSFET devices; Surface roughness; Transistors, Series resistance, MOS devices
Subjects: Engineering
Divisions: SCIENTIFIC PRODUCTION > Engineering
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:47
URI: http://eprints.umi.ac.ma/id/eprint/3431

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