Es-Saghiri, A. and Boufounas, E.-M. and El Amrani, A. and Lucas, B. (2018) High on-off current modulation ratio investigated at onset voltage for an organic thin film transistor. In: UNSPECIFIED.

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Abstract

The performance of a pentacene based organic thin film transistor with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Furthermore, high current modulation ratios of 5×106 and 7.5×107 are reported for a lower drain voltage, respectively. These results are very important since current ratio exceeds a value of 107 is a quite interesting requirement than high mobility for some logic gate applications. © 2018 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Carrier mobility; Computer circuits; Drain current; Field effect transistors; Indium compounds; Modulation; Semiconducting organic compounds; Thin film circuits; Thin films; Threshold voltage; Tin oxides, Current modulation; Dielectric insulators; Electrical gates; Indium tin oxide; Onset voltages; Organic thin film transistors; OTFT; Pentacenes, Thin film transistors
Subjects: Engineering
Divisions: SCIENTIFIC PRODUCTION > Engineering
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:47
URI: http://eprints.umi.ac.ma/id/eprint/3174

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