Houmad, M. and Essaoudi, I. and Ainane, A. and El Kenz, A. and Benyoussef, A. and Ahuja, R. (2019) Improving the electrical conductivity of Siligraphene SiC7 by strain. Optik, 177. pp. 118-122.
Full text not available from this repository.Abstract
Using the 1st principle calculations founded on Density Functional Theory (DFT), we examined the strain effect of band gap (BG) and electrical property (EP) of Siligraphene (g-SiC7) under biaxial strains (Compressive and tensile) using Generalized Gradient Approximation (GGA). We found that the BG of g-SiC7 was decreasing as function of the strain and we remarked that the electrical conductivity of g-SiC7 under biaxial strains become important of 6 for tension effect. For the compressive, we obtained an increase for all compressive applying, but we remarked the higher and lower values are successively −2 and −6. Last not least, we deduced that it's possible to increase the electrical conductivity of g-SiC7. Also, this material can be used in solar cell applications and for photo-voltaic (PV) applications as a light donor material. © 2018 Elsevier GmbH
Item Type: | Article |
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Uncontrolled Keywords: | Density functional theory; Electric conductivity; Energy gap; Semiconductor materials; Strain, Biaxial strains; Donor materials; Electrical conductivity; Generalized gradient approximations; Photovoltaic; Siligraphene g-SiC7; Solar-cell applications; Strain effect, Silicon compounds |
Subjects: | Engineering |
Divisions: | SCIENTIFIC PRODUCTION > Engineering |
Depositing User: | Administrateur Eprints Administrateur Eprints |
Last Modified: | 31 Jan 2020 15:47 |
URI: | http://eprints.umi.ac.ma/id/eprint/3154 |
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