Houmad, M. and Essaoudi, I. and Ainane, A. and El Kenz, A. and Benyoussef, A. and Ahuja, R. (2019) Improving the electrical conductivity of Siligraphene SiC7 by strain. Optik, 177. pp. 118-122.

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Abstract

Using the 1st principle calculations founded on Density Functional Theory (DFT), we examined the strain effect of band gap (BG) and electrical property (EP) of Siligraphene (g-SiC7) under biaxial strains (Compressive and tensile) using Generalized Gradient Approximation (GGA). We found that the BG of g-SiC7 was decreasing as function of the strain and we remarked that the electrical conductivity of g-SiC7 under biaxial strains become important of 6 for tension effect. For the compressive, we obtained an increase for all compressive applying, but we remarked the higher and lower values are successively −2 and −6. Last not least, we deduced that it's possible to increase the electrical conductivity of g-SiC7. Also, this material can be used in solar cell applications and for photo-voltaic (PV) applications as a light donor material. © 2018 Elsevier GmbH

Item Type: Article
Uncontrolled Keywords: Density functional theory; Electric conductivity; Energy gap; Semiconductor materials; Strain, Biaxial strains; Donor materials; Electrical conductivity; Generalized gradient approximations; Photovoltaic; Siligraphene g-SiC7; Solar-cell applications; Strain effect, Silicon compounds
Subjects: Engineering
Divisions: SCIENTIFIC PRODUCTION > Engineering
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:47
URI: http://eprints.umi.ac.ma/id/eprint/3154

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