Hassouani, Y.E. and Alaoui, K.H. and Idrissi, A.E. and Hahioui, M.E. and Benami, A. (2014) Numerical simulation of the performance of dual junction a-Si:H/a-SiGe:H solar cell with AMPS-ID. In: UNSPECIFIED.

Full text not available from this repository.
Official URL: https://www.scopus.com/inward/record.uri?eid=2-s2....


The aim of this work was to design solar cells with dual junction amorphous silicon/amorphous silicon germanium (a-Si:H/a-SiI-xGex:H) absorber structure. However, thin film solar cells still suffer lower conversion efficiency and need to be improved using innovative technologies. In the present work, p-aSi: H, i-a-Si:H, i-a-SiJ-xGex:H and n-a-Si:H layer with the same band gaps of 1.8 eV, the thickness equal to 5 nm, 340 nm, 5 nm and 5 nm respectively, and acceptor and donor concentrations are constant and equal to 3x10J9 cm-3 and lxlOJ9 cm-3, respectively, are optimized for obtaining efficient a-Si:H p-i-i-n solar cell by computer aided one-dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) simulation program. To improve the performance of a-SiI-xGex:H we investigate: i) the band gap effect of a-SiJ-xGex:H, ii) the thickness effect of a-SiI-xGex:H on the conversion efficiency of solar cell. Simulation results show that considerable efficiency enhancement can be obtained. © 2014 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Amorphous films; Amorphous silicon; BiCMOS technology; Computer aided analysis; Computer simulation; Conversion efficiency; Energy gap; Microelectronics; Numerical models; One dimensional; Silicon; Silicon solar cells; Thin films, AMPS-ID; Donor concentrations; Efficiency enhancement; Innovative technology; One-dimensional analysis; Photonic structure; Simulation program; Thin film solar cells, Solar cells
Subjects: Energy
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:47
URI: http://eprints.umi.ac.ma/id/eprint/3074

Actions (login required)

View Item View Item