Bendada, E. and Rahmoun, M. and El Hassani, A. and Rais, K. and Elabbassi, A. (2000) Characterization of shrinking device geometries effects in N-channel HEXFETs. Modelling, measurement and control. A, general physics, electronics, electrical engineering, 73 (1-2). pp. 21-27.

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Abstract

The electrical properties of the body-drain diode of HEXFETs are shown to be related to the device geometrical structure. The analysis takes into account two dimensional edge effects. Intrinsic parameters are extracted from current-voltage characteristics and obtained dependent on the gate length and width.

Item Type: Article
Uncontrolled Keywords: Current voltage characteristics; Gates (transistor); Semiconducting silicon; Semiconductor device models; Semiconductor device structures; Semiconductor diodes; Semiconductor junctions, Gate length; Gate width; Hexagonal field effect transistor; Shrinking device geometry, Field effect transistors
Subjects: Computer Science
Divisions: SCIENTIFIC PRODUCTION > Computer Science
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:46
URI: http://eprints.umi.ac.ma/id/eprint/2810

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