Asmae, B. and Seddik, B. and Adil, S. (2018) Analytic estimation of two-dimensional electron gas density and current-voltage characteristic in AlGaN/GaN HEMT's. International Journal of Electrical and Computer Engineering, 8 (2). pp. 954-962.

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This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed. © Copyright 2018 Institute of Advanced Engineering and Science. All rights reserved.

Item Type: Article
Subjects: Computer Science
Divisions: SCIENTIFIC PRODUCTION > Computer Science
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:46

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