Maouhoub, S. and Aoura, Y. and Mir, A. (2016) FEM simulation of AlN thin layers on diamond substrates for high frequency SAW devices. Diamond and Related Materials, 62. pp. 7-13.

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Abstract

AlN/Diamond structure is very promising for high frequency acoustic wave devices. In this paper, a comprehensive investigation of AlN/Diamond structure is presented using finite element method. The phase velocity and the coupling coefficient of the first two modes of SAWs for the AlN/Diamond structure are numerically analyzed and compared to experimental data. Close agreement between experimental and numerical results is obtained. Results show that the mode 1 (Sezawa mode) exhibits the largest coupling coefficient of 1.28 associated with a phase velocity of 9500 m/s. Additionally, the temperature coefficient of frequency (TCF) and the reflection coefficient (r) are studied. The simulation results show that for a zero TCF, a high phase velocity of 10,800 m/s associated with a coupling coefficient of 0.5 can be obtained. These results demonstrate that the AlN/Diamond structure can be used to design wide-band and temperature-compensated SAW devices. The dependence of SAW devices performance with the electrode height, metallization ratio and mass-loading is also investigated. © 2015 Elsevier B.V.

Item Type: Article
Uncontrolled Keywords: Acoustic surface wave devices; Acoustic waves; Diamonds; Phase velocity; Temperature, AlN; Coupling coefficient; Diamond substrates; High-frequency acoustic waves; Metallization ratio; Surface acoustic waves; Temperature coefficient of frequencies; Temperature compensated, Finite element method
Subjects: Chemistry
Divisions: SCIENTIFIC PRODUCTION > Chemistry
Depositing User: Administrateur Eprints Administrateur Eprints
Last Modified: 31 Jan 2020 15:45
URI: http://eprints.umi.ac.ma/id/eprint/1890

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